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In this paper, we described the formation of SiO2 and CrSi2 thin films using a magnetron sputtering device. The surface morphology of the films was analyzed using ASM and SEM devices, and the elemental composition of the samples was determined using an energy-dispersive X-ray measurement device. Electrophysical quantities were determined using the HMS-5000 measuring device. According to the measurement results, it was confirmed that CrSi2 semiconductor nanofilms and SiO2 dielectric thin films were successfully grown by solid phase ion-plasma method. The charge carrier mobilities, bulk and sheet concentrations of the thin films are consistent with the values in the available literature. These layers are of practical importance in the use of sensors operating in the IR range. The nature of interactions through distance such as gravitational interaction, electromagnetic interaction, nuclear interaction, etc.
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