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This article reviews the growth concept of silicon nanowires with an attention to semiconductor nanowires filling the gap in the knowledge from the very original work to the very recent in-novative experimental work. The objectives of this article are as follows; 1- to describe the orig-inal work of epitaxial growth of semiconductor nanowires, 2- to discuss the recently emerged technique of nanoscale templating controlling the growth position of nanowires, and 3- to ex-plore the possible technological applications of position-controlled silicon nanowires. Compre-hensive description of the first reported successful Vapor-Liquid-Solid (VLS) 1-D growth of sili-con crystals is given. The growth approach of bottom-up, and the supersaturation in a three-phase system of VLS is presented along with the nucleation at the Chemical Vapor Depo-sition (CVD) processes. Positional assembly of silicon nanowires using current available tech-niques along with the recently invented one of Nanoscale Chemical Templating (NCT). Several applied and conceptional methods of developing available energy applications using nanowires are included, such as, photovoltaic (PV) cells, Atomic Force Microscopy (AFM) and Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are explained. The finial section of this review showed statistical trends in nanowires and nanorods scientific studies.
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